Thermally Stimulated Conductivities in CdIn₂S₄

Abstract

To investigate the characteristics of traps in the single crystal of CdIn₂S₄, thermally stimulated currents (TSC) were measured in the temperature range from 90 to 300 K under various conditions such as varying light intensity, wavelength of light, heating speed and so on. The results were analysed in terms of a discrete-level-model, first developed by Haering and Adams. On the bases of the slow retrapping regime, least-square-curve-fittings were made and trap energies were obtaind as 0.04 and 0.09 eV for shallow traps and 0.23 eV for deep ones, other trapping aparameters also being obtained. Since structure due to deep traps was observed in TSC only by excitation at high temperature above 170 K, those traps were considered to have potential barriers around them as analogous to those observed in CdS by Bube et al.