Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
Electron Spin Resonance of Disordered Sm Ions in SmB6
Toshimasa UemuraYoshiaki ChibaMasayuki HagiwaraMuneyuki Date
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1986 Volume 55 Issue 11 Pages 3737-3740

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Abstract
Electron spin resonance (ESR) of disordered Sm ion located at the B6-cluster site in SmB6 is observed. Various valence states such as Sm3+, Sm2+, Sm0, Sm and Sm2− are found. It becomes clear that there are two ways of electron trapping on the disorder site. One of them is the 4f-trap where additional electrons occupy the vacant 4f-level of the disordered Sm with the Hund rule. On the other hand, weakly coupled donor electrons exist in addition to the 4f level electrons. Two possibilities of the coupling model are discussed.
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