Theory of Exchange Interaction Effects on Electronic States in Highly-Doped Low-Dimensional Structure Semiconductors

Abstract

The previously developed theories of the impurity-doping effect on electronic states in quasi-two and quansi-one dimensional structure semiconductors are extended to take into account the Coulomb-hole term in the exchange interaction. The theory is applied to single-quantum-well and single-quantum-wire of n-type GaAs embedded in undoped GaAlAs, considering the conduction band. The effect of the Coulomb-hole term is to partially cancel the shift of the density of states (DOS) toward higher energy produced by the multi-site multiple impurity-scatterings. It is shown that the Coulomb-hole term effect in lower-dimension structures is as important as that in a three-dimensional structure.