1988 Volume 57 Issue 3 Pages 1013-1023
This paper reports magnetic quantum oscillations of high electric field magnetoresistance due to nonradiative carrier recombination processes, i.e., Auger process and Shockley-Read process, in n-Hg1−xCdxTe (MCT) (x\simeq0.2). A new effect of magnetic quantum oscillation due to the electron trapping with emission of multiple LO-phonons associated with Shockley-Read process was observed together with the oscillation due to Auger process. Oscillations were observed successfully in a wide temperature range 4.2∼100 K, by the combination of a pulse technique and a second derivative method. The dominant origins of the oscillation can be clearly determined from the temperature dependence of the peak positions. In typical samples of MCT, Shockley-Read process governs the recombination at the lower temperature and Auger process at the higher temperature in the magnetic field. The temperatures of the crossing over of the two processes were determined for several samples with different carrier concentrations n and different electron mobilities μH(n=3×1014∼2×1015 cm−3, μH=8×103∼2×105 cm2/ V·s at 4.2 K).
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