Journal of the Physical Society of Japan
Online ISSN : 1347-4073
Print ISSN : 0031-9015
ISSN-L : 0031-9015
DC Hall Effect of the Low-Tc State of β-(BEDT–TTF)2I3
Keizo MurataMasayoshi IshibashiYoshiaki HondaMadoka TokumotoNobumori KinoshitaHiroyuki Anzai
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1989 Volume 58 Issue 10 Pages 3469-3472

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Abstract
The Hall effect was studied in β-(BEDT–TTF)2I3 in order to survey the problem of the low-Tc and the high-Tc states and the general interest to the Fermi surface of this material. i) Our measurement revealed that this material is a metal with almost constant hole numbers down to 20 K. By the estimate of RH=1⁄nec, the hole number seems to be less than one per unit cell. ii) In the temperature dependence of RH in detail, we found a pronounced stepwise decrease by 8% in Hall voltage when temperature is lowered through 175 K but not through 110 K. iii) Further, below 20 K, Hall voltage was found to decrease. Possible reasons for such phenomena are discussed.
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