On the Theory of Auger Recombination in Slightly Compensated Heavily Doped Semiconductors

Abstract

A study is given of the eifect due to the impurity correlation on Auger processes in a slightly compensated heavily doped semiconductor that is obtained by thermal preparation. Account is taken of high-temperature ionic correlation and low temperature electronic screening as well. Contrary to the case of close compensation, the impurity correlation in the sample in question is generally found to be of far less importance, reducing the Auger recombination only by about an order of magnitude in favour cases.