Direct Current Characteristics of the Selenium Rectifier

I. Theory of Rectification

Abstract

On the assumption that the barrier layer of the selenium rectifier has a construction composed of n-type semiconductor, insulating film and p-type semiconductor, the author has offered a new rectification theory. In this theory, the author contrived a structure with which the direction of rectification due to insulating film does not come out to be inverse to the result of experiment, as Wilson’s theory.