[volume title in Japanese]
Session ID : PB-10
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Impact of boron doping in aSi:H on the defect densities at aSi:H/cSi heterointerface and in cSi surface evaluated by the conductance of FET-TEGs
Yutaka Hayashi, Kazuhiro Gotoh, Tomohiko Hara, Takefumi Kamioka, Ryo Ozaki, Motoo Morimura, Kyotaro Nakamura, Yasuyoshi Kurokawa, Noritaka Usami, Yoshio Ohshita
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