Abstract
Ataxia Telangiectasia (AT) is genetic disorder caused by lack of ATM (ataxia telangiectacia mutated) gene. ATM modulates DNA repair, cell cycle arrest, and apoptosis induced by ionising radiation. AT cell line has a deficiency of DNA repair and radiation induced cell cycle arrest, however, relationship between ATM and radiation induced apoptosis is still unclear. Moreover, apoptosis of AT cell line induced by low LET irradiation is well studied whereas by high LET irradiation such as heavy-ion irradiation is not. Here we reported heavy-ion induced apoptosis in human ATM deficient lymphocyte cell line GM01525 comparing with normal lymphocyte cell line GM14511. As irradiation sources, C, Si, Argon, Fe ion beams were used. For counting, we mainly used fluorescence staining method to see chromatin condensation as apoptotic cells. As a result, apoptosis in normal lymphocyte was occured with about 100keV/microm of LET irradiation, whereas apoptosis in AT lymphocyte was not. This suggests that ATM gene has a function to increase apoptotic cells in human lymphocyte cell line. [J Radiat Res 44:446 (2003)]
