Electron Backscattering in Sputter Depth Profiling Using AES, EPES, and REELS

Abstract

  The main applications of electron backscattering in sputter depth profiling using AES and related electron spectroscopies such as elastic peak electron spectroscopy (EPES) and reflection electron energy loss spectroscopy (REELS) are briefly summarized. EPES depth profiling is particularly useful for improving the interfacial depth resolution in binary systems by selecting a suitable primary electron energy. With REELS depth profiling, the change of the IMFP during sputtering through an A/B interface can be quantitatively determined. Recently, a method for implementing the backscattering effect in the MRI model has been introduced and applied to AES depth profiles of single layer and multilayer structures. Its capability to provide quantification of measured profiles including the backscattering effect is outlined.