2009 Volume 15 Issue 3 Pages 225-228
A new method for the combination analysis of high-resolution Rutherford backscattering spectroscopy (HRBS) and angle-resolved X-ray photoelectron spectroscopy (AR-XPS) is proposed for accurate depth profiling of chemical states. In this method, attenuation lengths (ALs) for the photoelectrons are first determined so that the AR-XPS result is consistent with the HRBS result. Depth profiling of the chemical states are then performed in the AR-XPS analysis using the compositional depth profiles obtained by HRBS as constrained conditions. This method is successfully applied to a hafnium-based gate stack structure demonstrating its feasibility.
