Abstract
The surface of BaTiO3 single crystal was cleaned by Ar gas cluster ion beam (Ar-GCIB) etching. We carried out XPS measurement on the cleaned surface and clarified chemical state’s changes of Ti and Ba element.
Surface cleaning was also carried out by the conventional Ar monoatomic ion beam etching to compare the damage on the chemical state of BaTiO3 single crystal. Ti was reduced and changed its valence from Ti4+ to Ti3+ by Ar monoatomic ion beam etching at 2 keV energy. Moreover, Ba 3d XPS spectrum showed a large peak shift of 2 eV toward higher binding energy. On the other hand, we found that Ar-GCIB is useful to clean the surface without any chemical state’s change of Ti and Ba in BaTiO3 single crystal.
