Abstract
Surface analysis technologies are very important and had been widely used in semiconductor material and device analysis. In this presentation, several important studies of III-V semiconductor materials and devices using different surface analyses, including scanning electron microscopy, energy dispersive spectrometer (SEM+EDS), X-ray photoelectron spectroscopy (XPS), especially secondary ion mass spectrometry (SIMS), will be introduced. For example, the physical origin of the droop effect; different failure mechanism; etching mechanism of lateral porous GaN, and how to distinguish the dopant occupation in the semiconductor lattice, etc.
