Complementary analysis for dislocations of GaN compound semiconductors using STEM and APT

Norihito Mayama; Kei Watanabe; Kazuya Toda; Jun Koyama; Satoshi Ishimura; Mina Suganuma; Masakazu Sugiyama

doi:10.1384/jsa.26.200

Extended Abstracts from 8th International Symposium on Practical Surface Analysis (PSA19)

Complementary analysis for dislocations of GaN compound semiconductors using STEM and APT

Norihito Mayama , Kei Watanabe, Kazuya Toda, Jun Koyama, Satoshi Ishimura, Mina Suganuma, Masakazu Sugiyama

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JOURNAL FREE ACCESS

2019 Volume 26 Issue 2 Pages 200-201

DOI https://doi.org/10.1384/jsa.26.200

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Abstract

For GaN compound semiconductors, the position of dislocations was confirmed by STEM, and the elemental distribution was clarified by APT. From the results of APT, cluster segregation of Mg and In was observed on the dislocation, and it could be considered that they were diffused along the dislocations.

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