In-situ Work Function Measurement of Molecular Beam Epitaxy Film Surface Using RHEED-Beam Excited Secondary Electron Peaks

Abstract

The relative work function of growing surface of molecular epitaxy films was measured in situ using the energy shifts observed in secondary electrons excited by reflection high energy electron diffraction beam. In the case of a superconducting perovskite YBa₂Cu₃O_x the measured work function showed different behaviors between the coevaporation and the sequential evaporation of the metal elements reflecting differences in the electronic structures of the growing surfaces.