Journal of the Japan Society of Applied Electromagnetics and Mechanics
Online ISSN : 2187-9257
Print ISSN : 0919-4452
ISSN-L : 0919-4452
Special Topic: Power Electronics Technology for Practical Applications
Development of a Power Module Technology for Wide-gap Semiconductors
Akio SUGIKI
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Keywords: SiC power module, low inductance, high heat resistance, low thermal resistance, SiC-MOSFET
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2022 Volume 30 Issue 1 Pages 2-8

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Abstract

　High heat resistance, low inductance, and low thermal resistance are required for power module packages that bring out the performance of wide-gap semiconductors. This paper reports the results of developing a power module for wide-gap semiconductors.

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