JSAP Review
Online ISSN : 2437-0061
Tutorial Review
Creation of synthetic Rashba field in silicon via gate electric field
Masashi Shiraishi
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2022 Volume 2022 Article ID: 220203


The creation of a synthetic Rashba field in a Si channel of a Si spin metal-oxide-semiconductor field-effect transistor is introduced and discussed. The Rashba field is attributed to the local electric field at the Si/SiO2 interface and can be tuned by a gate electric field. An effective magnetic field due to the Rashba field gives rise to spin-lifetime anisotropy in a Si channel, which is detected by the oblique Hanle effect. It is also found that the Rashba field is built-in even at a gate voltage of 0 V. The magnitude of the spin splitting energy is estimated to be 0.6 µeV, which is comparable to that in strained GaAs.

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