JSAP Review
Online ISSN : 2437-0061
Tutorial Review
Diamond field-effect transistors
Yamaguchi Takahide
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JOURNAL OPEN ACCESS

2025 Volume 2025 Article ID: 250205

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Abstract

Diamond exhibits unique properties enabling the fabrication of high-performance p-channel field-effect transistors, an achievement that remains challenging for other wide-bandgap semiconductors. This distinct potential positions diamond as an exceptional semiconductor material for realizing complementary power inverter circuits and other advancements in power electronics. This paper provides a comprehensive review of the progress on diamond field-effect transistors, with particular emphasis on the diamond/gate insulator interface and its critical influence on device performance.

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