Abstract
Among Cu-based compound semiconductors of Cu3-Sb-VI4 (VI=S, Se), Cu2-IV-S3 (IV=Ge, Sn) and Cu2-Zn-IV-Se4 (IV=Ge, Sn), single phases of Cu3SbSe4, Cu2SnS3, Cu2ZnGeSe4 and Cu2ZnSnSe4 were synthesized from respective melts, and single crystals of those four compounds were grown. Optical band gaps of Cu2ZnGeSe4 and Cu2ZnSnSe4 were determined by optical absorption measurements to be 1.64 and 1.40eV, respectively. From the temperature dependence of electrical resistivities, thermal band gap of Cu3SbSe4 was estimated to be 0.22eV.
