Abstract
Silicon carbide (SiC) is a wide gap semiconductor which has enough mechanical strength and chemical stability at a high temperature region. These properties are favorable to use as high temperature thermoelectric conversion materials. Several SiC based materials were fabricated in our previous works. In this study, Fe was selected as an additive element to reduce the electrical resistivity. Electrical resistivity and Seebeck coefficient were measured from room temperature to around 750°C. Thermal conductivity was measured from room temperature to around 300°C. By addition of Fe, electrical resistivity decreased drastically and they showed n-type semiconductor properties. The electrical resistivity decreased to 1.8×10-4Ωm for the Fe 10.0wt.% doped sample at 750°C. The maximum value of figure of merit Z was estimated about 1.0×10-5K-1 around at 750°C.
