Preparation of new PTCR material by particle composition

Abstract

The purposes of the present work are to describe the importance of forced electrification to particle hybridization and to develop new materials with multi-functions by combining two kinds of particles electrified reciprocally. This paper reports a preparation method and the positive temperature coefficient of resistivity (PTCR) properties of complex particles consisting of semiconductive BaTiO₃ particles and metallic indium particles by this method.
Moreover, it is thought that the electrical properties at contact interfaces between these two kinds of particles plays a very important role in the cell packed by these complex particles. In the next stage, these properties were measured quantitatively. As a result it was confirmed that the I-V characteristics at the contact interface between a semiconductive BaTiO₃ disc and vapor-deposited metallic indium film were similar to those at the contact interface between a semiconductive BaTiO₃ disc and liquid In-Ga eutectic alloy layer. But it was apparent that vapor-deposited Au film formed a Schottky barrier because of its high value of work function.