Preparation and electrical properties of silicon hexaboride composites containing carbon

Abstract

In this study, SiB₆ and SiB₆-10wt%C prepared by hot pressing. The influence of temperature on the electrical conductivity of SiB₆ and SiB₆-10wt%C sintered body was investigated. The sample was sintered at 1973K for 3.6ks in vacuum under a pressure of 25MPa. The relative density of sintered body at 1373K was approximately 99%. The high temperature electrical conductivity measured using a D.C. four-terminal method.