Gas phase crystal growth of pure and SbI₃ doped Bi₂Te₃

Abstract

Pure and SbI₃ doped Bi₂Te₃ crystals were grown by the gas phase crystal growth technique. It was found that the source materials grew into crystals in the shape of a truncated rhombohedron, and that SbI₃ acted as a transport agent. Laue back reflection experiment revealed that the crystals grew in the hexagonal c-direction and that the grown crystals includes a number of single crystal lattices grown in slightly different directions within 2°.