2001 Volume 13 Issue 3 Pages 463-466
Aluminum oxide (Al2O3) films were prepared on a Si(100) surface by a hot wall technique using aluminum iso-propoxide as a source material. The films could be deposited onto a Si(100) substrate at temperatures above 623K. The addition of water (H2O) vapor during the deposition process was effective to reduce the substrate temperature to 523K in order to obtain Al2O3 films. The structures of the films were amorphous. The growth rate was between 0.016-0.108nm sec-1 depending both on the substrate temperature and the presence of H2O vapor. Although the as-deposited films prepared at substrate temperatures below 473K in the presence of H2O vapor have stoichiometry close to Al2O3, they contained Al-OH bonds in them. Voltage vs. current characteristics of the films are also discussed.