Abstract
The opto-electronics device is an element that photoelectric conversion is possible by itself. In the present investigation, the opto-electronics device was constructed by using organic materials. From this research, we attempt to find out the characteristic of opto-electronics produced by n-silicon and p-photocatalyst layer by changing the polymerization quantity of the storage layer and the incident light intesity. It was found that the photovoltage increases linearly with incident light intesity.
