Abstract
Low temperature molecular beam epitaxial (MBE) growth of Bi cuprates are realized on various substrates. Ultra thin films of Bi2201 and Bi2212 could be formed under low temperature (<673K) using 10-5Pa of NO2 as an oxidant. The in-plane lattice constants of the ultra-thin films, with thickness less than 6nm, formed under the low temperature epitaxial growth condition on the substrates with less than 3% lattice mismatch were similar to those of the substrates, with the Poisson's ratio of ca. 0.1, in the case of Bi2201 phase. Relaxation of the lattice strain caused by the epitaxial growth was examined by varying the thickness of the epitaxially grown films on SrTiO3(100). It was revealed that the averaged lattice constant observed by the X-ray diffraction became to show the value of the bulk material around the film thickness of 10 half c unit cells. In this paper, details of the lattice relaxation are discussed.
