Influence of EB irradiation on water wettability of wafer

Youji HIRAIWA; Kiyotaka MORI; Yoshitake NISHI; Akira TONEGAWA; Mitsuo IWASE

doi:10.2978/jsas.8.101

Youji HIRAIWA, Kiyotaka MORI, Yoshitake NISHI, Akira TONEGAWA, Mitsuo IWASE

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Keywords: electron beam irradiation, Si (100) wafer, wettability

JOURNAL FREE ACCESS

1996 Volume 8 Issue 1-2 Pages 101-102

DOI https://doi.org/10.2978/jsas.8.101

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Abstract

An influence of electron beam (EB) irradiation on the wettability is investigated of the (100) plane of the Si wafer. The wettability is estimated from the contact angle of water. The EB irradiation increases the wettability.

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