Abstract
For generation of electric power based on plasma confinement devices or nuclear fusion reactors, it was proposed to apply the Nernst effect to semiconductors, which are called Nernst elements. The efficiency of this energy conversion depends on transport properties of the Nernst element. It is expected that high mobility semiconductors, for example InSb, are suitable for the Nernst elements. In order to measure transport coefficients of the Nernst elements, we developed the diagnostic system. On our experiment of n-InSb doped with Te, we have detected the Nernst Voltage of about 3mV in the magnetic field of 4 Tesla at 323K with the temperature gradient of 100K per 17mm. This measuring system will make a lot of contributions to finding and studying the Nernst elements.
