Abstract
Preparation of single-phase CdS thin-films suitable as a window-layer for CuInSe2 has been studied by means of a chemical deposition method. CdS thin-films, although contain trace of γ-Cd(OH)2, were grown from solutions consisting of 0.5M-CdSO4, 1.4M-NH4OH, 1M-SC(NH2)2 and 1.48M-Triethanolamine, holding at 80°C. The films showed a direct band gap of 2.38eV and had a high transparency at room temperature.
