2007 Volume 51 Issue 12 Pages 735-740
Synthesis of diamond using mode-translation type microwave plasma CVD from a CH4-H2-O2 reaction gas system was investigated. Diamond could not be synthesized by addition of O2 at low CH4 flow rate. On the other hand, diamond could be synthesized by addition of small amounts of O2 at high CH4 flow rate. The area of film formation was extended by addition of O2 at high CH4 flow rate. Moreover, the quality of diamond produced using the CH4-H2-O2 reaction gas system was almost the same as that obtained using the CH4-H2 reaction gas system and the diamond deposition rate was increased by addition of small amounts of O2 at high CH4 flow rate. In conclusion, the deposition rate and quality of diamond were improved by addition of small amounts of O2 at high CH4flow rate in this system.