Abstract
As multilayer copper wiring is constructed, the planarized topographical features of the copper layers become increasingly important. One of the most promising techniques for surface planarization is chemical mechanical polishing (CMP). CMP is a highly efficient process due to the varied chemical and physical properties of the slurry, which is composed of abrasive particles suspended in a chemical solution. In this study, polyglycerol-functionalized nanodiamond (ND-PG) is proposed as a suitable abrasive for copper CMP. As ND-PG has good features such as small diameter, high water solubility, and no risk of metallic contamination, it is available for next-generation design rules of semiconductors. In this paper, the planarization performance of ND-PG is investigated. It is experimentally confirmed that a slurry containing ND-PG improves the RMS surface roughness from 20 to 1 nm.
