Abstract
The effects of the grinding conditions on machining performance in the process of Si wafer rotary grinding are generally evaluated using the ratio between the rotational speeds of the grinding wheel and the wafer. Here, we propose that it is not appropriate to evaluate machining performance using this rotation speed ratio, because the grinding length, L, between the grinding wheel and the wafer changes according to the diameter. Furthermore, the level of damage to the wafer surface varies with the grinding wheel feed rate, which dictates grain depth of cut, D. Therefore, we defined a new dimensionless number, the grain approach angle, D/L. Si wafer grinding was then performed to investigate the effects of surface roughness and power consumption of the grinding wheel spindle on the grain approach angle. It was surmised that ductile mode grinding occurred under grinding conditions with D/L≤3×10-10.
