Abstract
Many functional materials, such as Si, SiC, α-Al2O3, and GaN, present in wafer form. Rotary in-feed surface grinding (RISG) is used for such wafer manufacturing. However, RISG dynamics, in which both the grinding wheel and wafer rotate around their own axes, differs from that of conventional reciprocating surface grinding. Therefore, conventional wired dynamometers are not applicable in RISG. Consequently, the material removal mechanism of RISG has not been clarified in sufficient detail. In this research, we built a grinding model and analyzed the chip geometry. A theoretical formula of grinding force was derived based on the analytical results. In addition, we developed a wireless dynamometer to measure grinding force in RISG. We conducted grinding experiments using the developed wireless dynamometer. The results confirmed that the grinding force matched with the theoretical analysis. During Si grinding, the force ratio Fn/Ft was about 2.25~2.44. Total grinding force was proportional to the square of the wafer diameter.
