The Review of High Pressure Science and Technology
Online ISSN : 1348-1940
Print ISSN : 0917-639X
ISSN-L : 0917-639X
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Raman Studies of Silicon Clathrate Compounds under High Pressure
Tetsuji KUME
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2004 Volume 14 Issue 2 Pages 167-172

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Abstract
This article shows the recent Raman studies for type I silicon clathrates doped with Ba, K, and I atoms under high pressure at room temperature. The obtained Raman spectra indicate vibrational signals related with guest atoms encaged in the Si cages in a frequency region lower than 100 cm-1. In order to explore the pressure-induced phase transition, the Raman spectra were measured for the Si clathrates under high pressures using a diamond anvil cell. The spectral changes associated with the phase transition were observed, and the mechanisms of the phase transition were discussed on the basis of the spectral changes.
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© 2004 The Japan Society of High Pressure Science and Technology
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