The Review of High Pressure Science and Technology
Online ISSN : 1348-1940
Print ISSN : 0917-639X
ISSN-L : 0917-639X
Growing Method of a Large Synthetic Diamond Single Crystal
Shuichi SatohHitoshi Sumiya
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1993 Volume 2 Issue 4 Pages 315-320

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Abstract
Crystal growth mass is proportional to an area of a crystal surface. For producing a large diamond single crystal within a short time, we tried to use a large single seed crystal to obtain a single crystal immedately on it by the Temperature Gradient Method. A large single crystal, ten-carat size, was obtained within a short time, but many metal solvent inclusions were not removed in the above-mentioned seed crystal. The distribution of inclusions was relatee to morphologies. When a crystal grows into a hexagonal shape, a density of inclusions is minimized.
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