Phase Transitions in Cd1-xZnxTe (0 ≤ x ≤ 0. 55)

S. B. Qadri; E. F. Skelton; A. W. Webb; J. Z. Hu; J. Kennedy; C. Kim

doi:10.4131/jshpreview.7.319

Phase Transitions in Cd_1-xZn_xTe (0 ≤ x ≤ 0. 55)

S. B. Qadri, E. F. Skelton, A. W. Webb, J. Z. Hu, J. Kennedy, C. Kim

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Keywords: semiconductors, phase transitions, synchrotron radiation, energy dispersive x-ray diffraction

JOURNAL FREE ACCESS

1998 Volume 7 Pages 319-321

DOI https://doi.org/10.4131/jshpreview.7.319

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Abstract

The pressure-induced phase transitions and compressibility of Cd_1-xZn_xTe (0 ≤x≤ 0. 55) have been investigated to a pressure of 11 GPa. The B3-to-B 1 transformation shows a linear increase from 3. 4 GPa to 7. 0 GPa as the mole fraction of Zn varied from 0 to 55%.

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