JSME International Journal Series A Solid Mechanics and Material Engineering
Online ISSN : 1347-5363
Print ISSN : 1344-7912
ISSN-L : 1344-7912
Molecular Dynamics Study of Stress Effects on Raman Frequencies of Crystalline Silicon
Tomio IWASAKINaoya SASAKIHiroshi MORIYAHideo MIURANorio ISHITSUKA
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1998 Volume 41 Issue 4 Pages 481-487

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Abstract

The effects of stress on the Raman frequencies of crystalline silicon are studied using molecular dynamics simulation both for uniaxial stress along the[100]direction and for biaxial stress which is isotropic in the(001)plane. The Tersoff potential is used to represent the interaction among the silicon atoms. Simulation results showed that the tensile stress causes the Raman frequencies to decrease. The conversion coefficients that are needed for converting the shifts of the Raman frequencies into the stress were obtained by comparing the simulation results with the dynamical equations for optical modes. The values obtained for the coefficients agreed well with the experimental values obtained by other works. The obtained relationship between the uniaxial stress and the Raman frequency for vibration in the[001]direction also agreed well with the experimental result we obtained using microscopic Raman spectroscopy.

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