JSME International Journal Series A Solid Mechanics and Material Engineering
Online ISSN : 1347-5363
Print ISSN : 1344-7912
ISSN-L : 1344-7912
Molecular Dynamics Simulations on Structural Characteristics of Al Thin Films in Early Sputtering Process
Takashi IIZUKAToshihiko HOSHIDE
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1999 Volume 42 Issue 3 Pages 334-341

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Abstract

By using a molecular dynamics method, a film formation in an early sputtering process was modeled, and structural properties of Al thin films sputter-deposited on Al crystal substrate were simulated. Simulations were conducted for modeled sputtering conditions which were specified by the substrate temperature Tsi and the incident energy of atom Ei. When the substrate temperature was changed, no significant difference was observed in the radial distribution function, though an island-like structure was remarkable in the film simulated for a lower Tsi. Structures of simulated films were generally near crystal type in the entire region of Ei investigated in this study. To discuss simulated structures quantitatively, an apparent density was defined for a simulated film. The defined apparent density of film was smaller in the region of lower Ei, Where the island-like structure occupied a larger portion in a film. The apparent density was also found to increase with increasing Tsi and/or Ei.

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