OS5-3-2 Raman Spectroscopic Analysis of Surface Stress Distribution on Single Crystal Silicon Microstructures under Uniaxial Tensile Loading

Abstract

This paper describes an experimental analysis of surface stress distribution on single crystal silicon (SCS) microstructures using laser Raman spectroscope. A handmade tensile tester was employed to apply a uniaxial tensile stress to SCS specimen with a 270 nm-height and 4 μm-square SCS boss in the gauge section. In room temperature, Raman spectroscope measured surface stress, applied by the tensile tester, around the boss. The stress distribution obtained from two-curve fitting of Raman spectrum was in good agreement with that estimated by finite element analysis (FEA).