A Comparative Study of Thermal Conditions at Onset of Plastic Flow in Various Semiconductors
1991 Volume 34 Issue 1 Pages 65-68
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1991 Volume 34 Issue 1 Pages 65-68
The required thermal conditions for control of thermal stresses during the melt growth of Si, GaAs, InP and CdTe are compared. The results indicate that the low thermal conductivity and CRSS values of the compound semiconductors results in significantly lower values of admissible heat transfer rates in these materials when compared to Si.
JSME international journal. Ser. 1, Solid mechanics, strength of materials
JSME international journal. Ser. A, Mechanics and material engineering
JSME International Journal Series C Mechanical Systems, Machine Elements and Manufacturing
JSME International Journal Series B Fluids and Thermal Engineering
JSME International Journal Series A Solid Mechanics and Material Engineering
JSME international journal. Ser. C, Dynamics, control, robotics, design and manufacturing
JSME international journal. Ser. 3, Vibration, control engineering, engineering for industry
