2004 Volume 47 Issue 1 Pages 123-128
Although there have been some attempts to produce a monocrystalline silicon carbide (SiC) flat surface, the surface properties, such as surface roughness, have not satisfied the required specifications. In this study, we apply a helicon sputtering device to molecular beam epitaxy (MBE) to improve those properties. The helicon sputtering device was used as a molecular beam source for generating a Si molecular beam, where the electric field caused by the helicon coil supplied energy to the sputtered Si molecules. The amount of energy was controlled by the electric power applied to the coil. High-purity acetylene gas was used as the carbon (C) molecular beam source. The substrate was a monocrystalline (111) Si wafer. With the increase of the electric power, that is, the supply of high energy to molecules, the roughness of the surface was improved. A uniform mirror surface of monocrystalline SiC was produced over the entire substrate with a roughness of 1nm (Ra) order.
JSME international journal. Ser. 1, Solid mechanics, strength of materials
JSME international journal. Ser. A, Mechanics and material engineering
JSME international journal. Ser. 3, Vibration, control engineering, engineering for industry
JSME international journal. Ser. C, Dynamics, control, robotics, design and manufacturing
JSME International Journal Series A Solid Mechanics and Material Engineering
JSME International Journal Series B Fluids and Thermal Engineering