Abstract
Nucleation, coalescence, and growth processes of metal nano-clusters are investigated by molecular dynamics simulation. We assume a condition realized in the Ionized Cluster Beam Deposition, which is regarded as the effective technique for film formation in nano-electronics industry. We set the initial position and the initial velocity as random. Atomic interaction is determined by Lennard-Jones potential with parameters for copper. Temperature, number of atoms, and cell size are treated as varying calculation parameter. In the case of constant temperature, we can observe coalescence processes of clusters. A lognormal distribution of cluster size, which is similar to the result obtained by Smoluchowski equation in our previous study, is presented by using an adequate cluster-counting technique.
