The Proceedings of The Computational Mechanics Conference
Online ISSN : 2424-2799
2006.19
Session ID : 624
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624 Device Simulation of Stress-Induced Effects in Electronic Characteristics of nMOSFETs
Masaaki KOGANEMARU, Toru IKEDA, Noriyuki MIYAZAKI, Hajime TOMOKAGE
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Keywords: device simulation, residual stress, nMOSFET, electron mobility, deformation potential
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© 2006 The Japan Society of Mechanical Engineers
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