Development of three-dimensional simulation method of the void migration caused by electromigration in the interconnect line with bamboo structure

Abstract

Voids in a micro interconnect line can migrate and grow by electromigration (EM). Because the voids cause the disconnection of the interconnect line and lead to the electronic circuit failure, the prediction of the void migration caused by EM is important to improve the reliability of the interconnect line. Therefore, this study proposes a new multi-phase-field (MPF) model to simulate the void migration by EM in a polycrystalline interconnect. In this article, we present the use of the moving simulation domain method which enables numerical simulations of the void migration in a long interconnect line with a low computational resource. The simulation results demonstrate that the MPF model can simulate the migration and deformation of a void in a three-dimensional bamboo line. It is also revealed that the void migration is accelerated and decelerated when the void gets close to the grain boundary because the grain boundary attracts the void.