Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : November 23, 2018 - November 25, 2018
Residual stresses in electronic packages cause variations of electronic characteristics of semiconductor devices. This paper presents experimental and numerical evaluations of the stress-induced changes of direct-current (DC) characteristics of n-type SOI (Silicon on Insulator) MOSFETs (Metal-Oxide-Semiconductor Field-Effect-Transistors). Especially, interaction between mechanical stress and parasitic bipolar effects on DC characteristics of SOI device is investigated. The DC characteristics variations of SOI MOSFETs under uniaxial-stress are evaluated using a 4-point bending method. In addition, the stress-induced variations of DC characteristics of SOI MOSFETs are simulated by device simulation. The device simulation includes an electron mobility model for considering the effects of mechanical stress It is demonstrated that the experimental results of stress effects in SOI MOSFETs can be predicted qualitatively by the device simulation.
