Host: The Japan Society of Mechanical Engineers
Name : [in Japanese]
Date : September 16, 2019 - September 18, 2019
The adhesive fracture energy Gc of the photosensitive polyimide film (PI) on the copper film deposited on silicon wafer was evaluated by the peel test. The displacement rate and temperature dependence on Gc was confirmed, which is attributed to the secondary bonding i.e. van der Waals force. Therefore, Gc was fit to a single master curve using a conversion law by assuming that Gc is dominated by viscoelastic behavior. By obtaining G in the actual redistribution layer structure by FEM analysis, delamination of the interlayer dielectric film on the copper circuit in the structure was evaluated by the master curve of Gc established from the peel test result. As the result of FEM analysis, it was expected that the delamination of the interlayer dielectric film occur at room temperature during the reflow process. The result suggests that the interlayer dielectric film should be designed to improve Gc at 298K.
