Abstract
The demand for the superior performance and the size reduction of semiconductor devises are becoming severer with increasing the integrity of integrated circuits. However, the semiconductor lithographic process using the ultraviolet ray has met the limit to the produced pattern for the constraint of the wavelength. The nanoimprint lithography is one of the newly developed techniques to produce the nano-patterns easier than the MEMS process. Under such circumstances, this study aims to produce nano-patterns using the probe anodic oxidation method to support the nanoimprint mold production. In this report, the influences of anodic oxidation conditions and probe wear on produced nano-patterns were evaluated, and the formation of an island structure were also performed.
