Abstract
Nitrogen doped diamond like amorphous carbon (DLC) thin films on grass substrate were prepared by rapid frequency (rf) plasma chemical vapor deposition (CVD) using CH_4 as the source of carbon and with different N_2 flow rates (N2 : CH4 gas ratios between 0 : 100 and 30 : 70) ,at about 230 〜300K. The resistivity of the film were measured by Van der pauw method. The nitrogen content in the films was about 3.8-6.0%, obtained from Glow discharge optical emission spectroscopy. The thermoelectric performance of nitrogen doped DLC was increased step by step with increasing nitrogen flow rate. The difference of thermoelectric performance was decreased with the increase temperature.
