Abstract
In this paper we propose the new method for the quantitative evaluation of the adhesion strength at the delamination tip in the semiconductor devices. This method makes it possible to estimate the adhesion strength by the critical stress intensity factor K_c of the interfaces between the brittle materials like silicon and the resin. And this method consists of the cone shear test and 3-point bend delamination test. In addition we apply it to the semiconductor device and confirm the validity of this method through evaluating whether the delamination occurs at the interface between the silicon and the resin.
