Abstract
Polishing experiments using by pyramidal structured polishing pads with in different size abrasive have been performed. And the polishing rate, the roughness of surface, the wear behavior of cutting edge have been compared. A polishing rate of 5μm abrasive pad has been lower however the rate have not reduced compared with that of 10μm abrasive pad. In addition, releasing of abrasive and bond has been occurred frequently has been high roughness with progress of the polishing. And the surface of the silicon wafer became coarse by the expression of a new cutting edge. A polishing rate of the 10μm abrasive pad has been higher, but the rate has been reduced and contact area has become flat with progress of the polishing compared with that of 10μm abrasive pad. Surface roughness at 10μm abrasive pad has been about 10nmRa. In addition, wear types of cutting edge at 10mm abrasive pad have been atritious wear and fructure.
